【 中文摘要 】本发明属于微电子技术领域，公开了一种氮化镓肖特基势垒二极管及其制造方法。包括衬底和衬底上方的氮化镓外延层，氮化镓外延层上设置有欧姆电极和肖特基电极，肖特基电极的材料为氮化镍，欧姆电极的材料为钛、铝、镍和金，欧姆电极面积和肖特基电极面积的比值为q，欧姆电极和肖特基电极的上表面覆盖有PAD层，PAD层材料为镍和金。制备方法中制备氮化镍肖特基电极的方法为：在肖特基电极区域沉积镍金属，然后在氨气氛围中进行氨化，氨化的反应温度为100‑780℃，反应时间为1‑10小时，流量范围为5‑100sccm，压强范围为1‑1000mTorr。本发明的二极管反向泄漏电流更小，实验成本更低，具有较广的适用范围。

【 英文摘要 】The invention belongs to the technical field of microelectronics, and discloses a gallium nitride Schottky barrier diode and a manufacturing method thereof. The invention comprises a substrate and a GaN epitaxial layer above the substrate, wherein an ohmic electrode and a Schottky electrode are arranged on a gallium nitride epitaxial layer, the Schottky electrode is made of nickel nitride, the ohmic electrode is made of titanium, aluminum, nickel and gold, the ratio of the area of the ohmic electrode to the area of the Schottky electrode is q, the upper surface of the ohmic electrode and the upper surface of the Schottky electrode are covered with a PAD layer, and the PAD layer is made of nickel and gold. The method comprises the steps that nickel metal is deposited in a Schottky electrodearea, then ammonification is carried out in an ammonia atmosphere, the reaction temperature of ammonification is 100-780 DEG C, the reaction time is 1-10 hours, the flow range is 5-100 sccm, and thepressure range is 1-1000 mTorr. A diode provided by the invention is smaller in reverse leakage current, lower in experiment cost and wider in application range.

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