【 中文摘要 】本发明公开了一种基于TSV和RDL的三维电容器，包括硅衬底，硅衬底的一个端面设置有RDL顶面金属层、与RDL顶面金属层相对的另一个端面设置有RDL底面金属层，RDL顶面金属层和RDL底面金属层形状、大小相同，RDL顶面金属层上方还设置有RDL金属层，RDL顶面金属层和RDL底面金属层之间沿纵向连接有若干个圆柱形TSV，各个圆柱形TSV分布在硅衬底内。本发明的一种基于TSV和RDL的三维电容器，在于TSV的阵列电容外加两层RDL构成的MIM电容构成的三维集成电容器，大幅提高了集成电容器的质量和电容密度，可广泛用于模拟集成电路、模/数混合集成电路和射频/微波电路。

【 英文摘要 】The invention discloses a three-dimensional capacitor based on TSV and RDL. The capacitor includes a silicon substrate, one end surface of the silicon substrate is provided with an RDL top surface metal layer, the other end face opposite to the RDL top face metal layer is provided with an RDL bottom face metal layer, the RDL top metal layer and the RDL bottom metal layer have the same shape and size. An RDL metal layer is also arranged above the RDL top metal layer. Several cylindrical TSVs are connected between the RDL top metal layer and the RDL bottom metal layer along the longitudinal direction. The cylindrical TSVs are distributed in the silicon substrate. According to the invention, the three-dimensional integrated capacitor is composed of the TSV array capacitor and an MIM capacitorcomposed of two layers of RDL and added outside the TSV array capacitor, which greatly improves the quality and capacitance density of the integrated capacitor, and the capacitor can be widely used in analog integrated circuits, analog/digital hybrid integrated circuits and RF/microwave circuits.

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