【 中文摘要 】本发明涉及一种波长可调谐光电探测器及其探测方法，光电探测器包括：衬底层、第一介质层、浮栅层、第二介质层、沟道层、源电极和漏电极；第一介质层位于衬底层的上表面；浮栅层、源电极和漏电极位于第一介质层的上表面；源电极和漏电极分别位于浮栅层的两侧，且均与浮栅层之间具有间隔；第二介质层覆盖在浮栅层的上表面和侧表面；沟道层位于第二介质层的上表面；衬底层的材料为Ge，对红外光负响应；沟道层对可见光正响应。通过衬底层和沟道层对光的吸收完成光探测功能。将光电探测器与电阻R串联，调整栅控电压的大小改变浮栅层和沟道层中的电子分布，从而改变沟道电阻。根据光电探测器的阻值和电阻R的阻值比值的改变，实现波长选择性探测。

【 英文摘要 】The present invention relates to a wavelength-tunable photoelectric detector and a detection method thereof. The photoelectric detector comprises : a substrate layer, a first dielectric layer, a floating gate layer, a second dielectric layer, a channel layer, a source electrode and a drain electrode; A first dielectric layer on the upper surface of the substrate layer; A floating gate layer, a source electrode and a drain electrode on the upper surface of the first dielectric layer; The source electrode and the drain electrode are respectively located at two sides of the floating gate layer, and are spaced from the floating gate layer; The second dielectric layer covers the upper and side surfaces of the floating gate layer; A channel layer on the upper surface of the second dielectric layer; The material of the substrate layer is Ge, which responds negatively to infrared light; The channel layer responds positively to visible light. The light detection function is accomplished by the absorption of light by the substrate layer and the channel layer. The photoelectric detector is connected in series with the resistor R, and the size of the grid control voltage is adjusted to change the electron distribution in the floating grid layer and the channel layer, so as to change the channel resistance. The wavelength selective detection is realized according to the change of the ratio of the resistance value of the photoelectric detector to the resistance value of the resistor R.

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