陕西半导体先导技术中心成立于2017年5月，为适应国家产业发展战略需求，按企业化运营模式而成立的共性企业研发平台。主要致力于加快半导体前沿关键技术研发创新，推动以先进半导体器件和第三代半导体为核心的产业创新，服务于中国先进半导体的技术创新和成果转化。并建立半导体技术人才实习与培养的新一代体系，最终成为国家级半导体产业新技术和新工艺的推广转化基地。

【 中文摘要 】本发明公开了一种基于碳化硅的环状肖特基接触式核电池及其制作方法，主要解决现有肖特基结核电池效率低的问题。本发明自上而下依次包括键合层(1)、放射性同位素源层(3)、环状半透明肖特基接触层(2)、掺杂浓度为5×1014～5×1015cm-3的n型SiC外延层(5)、掺杂浓度为5×1017～5×1018cm-3的n型SiC衬底(6)和欧姆接触电极(7)，放射性同位素源层周围是SiO2钝化层(4)。该肖特基接触层(2)是采用中心为一个圆，周围是以该中心为圆心的多个圆环结构，该环状结构沿半径方向设有矩形条，矩形条的两端分别与中心圆和外圆环相接；放射性同位素源层(3)覆盖在环状肖特基金属层除矩形条外的区域及肖特基金属层之间的SiC外延层(5)上。本发明具有能量损失小，转换效率高的优点。

【 英文摘要 】The invention discloses a silicon carbide-based annular Schottky contact nuclear battery and a manufacturing method thereof, which mainly solve the problem of low efficiency in a conventional Schottky knot nuclear battery. The nuclear battery comprises a bonding layer (1), a radioactive isotope source layer (3), an annular semitransparent Schottky contact layer (2), an n-type SiC epitaxial layer (5) with the doping concentration of between 5*10<14> and 5*10<15> cm<-3>, an n-type SiC substrate (6) with the doping concentration of between 5*10<17> and 5*10<18> cm<-3>, and an ohmic contact electrode (7) from the top to the bottom in turn, wherein the periphery of the radioactive isotope source layer is provided with a SiO2 passivation layer (4). The Schottky contact layer (2) adopts a structure that the centre is a circle and the periphery is provided with a plurality of circular rings which take the centre as the centre of the circle. The annular structure is provided with rectangular strips along the radial direction; the two ends of the rectangular strips are respectively connected with a centre circle and an outer ring; the radioactive isotope source layer (3) is covered on the SiC epitaxial layer (5) between the area, besides the rectangular strips, of an annular Schottky metal layer and the Schottky metal layer. The nuclear battery has the advantages of low energy loss and high conversion efficiency.

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