【 中文摘要 】本发明公开了一种提高4H-SiC基面位错转化率的外延方法。主要解决利用刻蚀的方法使基面位错转化成刃型位错时转化率不高的问题。其方法是：(1)用KOH对4H-SiC衬底进行刻蚀，刻蚀温度为480℃～520℃，刻蚀时间为10～20min；(2)对刻蚀后的4H-SiC衬底进行表面清洁处理；(3)将表面清洁处理后的4H-SiC样品放置在CVD炉腔中，抽真空使炉内压强达到10 -7Pa，升高炉内温度至1400～1500℃，同时通入流量为20～50l/min的氢气，保持5min，再通入流量为8～15ml/min丙烷，升温至1580～1600℃，在压力为80～100mbar下保持30～50分钟；(4)在保持压力不变的条件下降温至1550±5℃时，通入硅烷进行外延生长。本发明可应用于4H-SiC同质外延材料的制作。

【 英文摘要 】The invention discuses an epitaxy method for improving 4H-SiC basal plane dislocation conversion rate, which mainly solves the problem that the conversion rate that basal plane dislocation is converted into edge forming dislocation is low by adopting an corrosion method; the method comprises the following steps : (1) etch a 4H-SiC substrate by KOH, the etching temperature is 480-520 DEG C, and theetching time is 10-20min; (2) surface cleaning processing is carried out to the etched 4H-SiC substrate; (3) a 4H-SiC sample which carries out surface cleaning processing is placed in a CVD furnace cavity, vacuumizing is carried out to lead the pressure intensity in the furnace to reach 10-7Pa, the temperature in the furnace is raised to 1400-1500 DEG C, and hydrogen with 20-50l/min flow rate flows in for 5min, and then 8-15ml/min of propane flows in, the temperature is raised to 1580-1600 DEG C for 30-50 minutes under 80-100mbar of pressure; (4) when the temperature is reduced to 1550 plus/minus 5 under the condition of unchanged pressure, and epitaxy growth is carried out by silane flowing-in. the method can be applied to manufacturing of 4H-SiC homoepitaxy material.

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