【 中文摘要 】本发明公开了一种I层钒掺杂的碳化硅肖特基结型核电池及其制作方法，主要解决现有技术中能量转换效率降低的问题。本发明的肖特基结型核电池自下而上依次包括n型欧姆接触电极(8)、掺杂浓度为1×10¹⁸～7×10¹⁸cm^-3的n型SiC衬底样片(7)、n型SiC外延层(6)、SiO2钝化层(5)、肖特基金属接触层(4)、肖特基接触电极(3)、键合层(2)和放射性同位素源层(1)，其中n型SiC外延层(6)通过注入能量为2000KeV～2500KeV，剂量为5×10¹³～1×10¹⁵cm^-2的钒离子形成掺杂浓度为1×10¹³～5×10¹⁴cm^-3的n型SiC外延层。本发明具有电子空穴对收集率，器件的开路电压和能量转换效率高的优点，可作为微系统的片上电源、心脏起搏器的电源和手机备用电源。

【 英文摘要 】The invention discloses a silicon carbide Schottky junction type nuclear cell with a vanadium-doped I layer and a production method of the silicon carbide Schottky junction type nuclear cell, mainly solving the problem of lowered energy conversion efficiency in the prior art. The Schottky junction type nuclear cell provided by the invention comprises an n-type ohmic contact electrode (8), an n-type SiC substrate sample (7) with a doping concentration of 1*10<18>-7*10<18>cm<-3>, an n-type SiC epitaxial layer (6), an SiO2 passivation layer (5), a Schottky metal contact layer (4), a Schottky contact electrode (3), a bonding layer (2) and a radioisotope source layer (1) from bottom to top, wherein the n-type SiC epitaxial layer (6) which has the doping concentration of 1*10<13>-5*10<14>cm<-3> is formed through injecting vanadium ions of which the energy is 2000 KeV-2500 KeV and the dosage is 5*10<13>-1*10<15>cm<-2>. The silicon carbide Schottky junction type nuclear cell with the vanadium-doped I layer has the advantages of high electron-hole pair collection ratio, high open circuit voltage and high energy conversion efficiency, and can be served as an on-chip power supply of a microsystem, a power supply of a cardiac pacemaker and an emergency power supply of a mobile phone.

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