【 中文摘要 】本发明公开了一种外延沟道的SiC IEMOSFET器件及制作方法，主要解决现有SiC IEMOSFET器件沟道电子迁移率低，导体电阻大的问题。本发明的器件包括栅极(1)、SiO2隔离介质(2)、源极(3)、源区N+接触(4)、P+接触(5)、P-外延层(7)、JFET区域(8)、P阱(9)、N-漂移层(10)、N+衬底(11)和漏极(12)，其中：SiO2隔离介质(2)和JFET区域(8)之间设有一层厚度为0.1μm～0.2μm，氮离子掺杂浓度为3×1016cm-3的上外延沟道层(6′)，使得器件在工作状态下的导电沟道远离SiO2和SiC界面，减少表面散射对电子迁移率的影响。本发明具有沟道电子迁移率高，导通电阻低，功耗低的优点，可用于开关稳压电源、汽车电子以及功率放大器领域。

【 英文摘要 】The invention discloses a SiC IEMOSFET (Implantation and Epitaxial Metal-Oxide -Semiconductor Field Effect Transistor) device with an epitaxy channel and a manufacturing method of the SiC IEMOSFET device, which mainly solve the problems of low channel electron mobility and high conductor resistance of the traditional SiC IEMOSFET device. The device disclosed by the invention comprises a grid electrode (1), a SiO2 insulating medium (2), a source electrode (3), a source region N<+> contact (4), a P<+> contact (5), a P<-> epitaxy layer (7), a JFET (Junction Field-effect Transistor) region (8), aP well (9), an N<-> drifting layer (10), an N<+> substrate (11) and a drain electrode (12), wherein an upper epitaxy channel layer (6') with the thickness of 0.1mum-0.2mum and the nitrogen ion dopingconcentration of 3*10<16>cm<-3> is arranged between the SiO2 insulating medium (2) and the JFET region (8) so that a conductive channel of the device in a working state is far away from SiO2 and SiCinterfaces and the impact of the surface scattering on the electron mobility is reduced. The SiC IEMOSFET device has the advantages of high channel electron mobility, low on-state resistance and low power dissipation and can be applied to fields such as switching mode voltage stabilizers, automotive electronics and power amplifiers.

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