【 中文摘要 】本发明涉及一种基于Ir2O3/Ga2O3的深紫外APD探测二极管及其制作方法。该方法包括：选取β‑Ga2O3衬底；在β‑Ga2O3衬底表面生长β‑Ga2O3材料形成同质外延层；在同质外延层表面生长上生长Ir2O3材料形成异质外延层；刻蚀异质外延层和同质外延层形成梯形结构；在异质外延层表面形成顶电极；在β‑Ga2O3衬底下表面形成底电极， 最终形成APD探测器二极管。本发明采用β‑Ga2O3材料， 发挥该材料在深紫外光区域和可见光区域的极高光透率和透明度， 并确保了APD探测器的耐压极高、击穿电场较高， 适合高频、高辐射、高温高压等极端环境， 在极端环境下不仅器件可靠性大幅提高， 探测性能也将优于目前的APD探测器。

【 英文摘要 】The invention relates to a deep ultraviolet APD detection diode based on Ir2O3/Ga2O3 and a manufacturing method thereof. The method comprises the following steps of selecting a beta-Ga2O3 substrate; growing a beta-Ga2O3 material on a beta-Ga2O3 substrate surface to form a homogeneous epitaxial layer; growing an Ir2O3 material on a homogeneous epitaxial layer surface so as to form a heterogeneous epitaxial layer; etching the heterogeneous epitaxial layer and the homogeneous epitaxial layer to form a trapezoidal structure; forming a top electrode on a heterogeneous epitaxial layer surface; and forming a bottom electrode on a lower surface of the beta-Ga2O3 substrate and finally forming an APD detector diode. In the invention, the beta-Ga2O3 material is used, a super high light penetration rate and transparency of the material in a deep ultraviolet area and a visible light area are performed, super high voltage withstanding performance of an APD detector and a high breakdown electric field are ensured; the diode is suitable for extreme environments of a high frequency, high radiation, high temperature and high voltage and the like; under the extreme environments, device reliability can be greatly increased and detection performance is better than that of an existing APD detector.

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